The AlGaN/GaN high electron mobility transistor (HEMT) epi-structure on SiC has excellent promise for developing industrially viable transparent ultraviolet (UV) photodetectors (PDs) that outperform current transparent PDs. They offer very high responsivity while maintaining a low dark current. The current state-of-the-art transparent UV PDs have a relatively lower performance. In addition, they are not based on mainstream semiconductor material systems, causing potential issues relating to material quality and durability for long-term application. We have demonstrated two- and three-terminal AlGaN/GaN HEMT-based transparent UV PDs. Our two- and three-terminal PDs have achieved respective detectivities of 2.17 × 1018 and 3.18 × 1016 Jones, setting new benchmarks in the transparent UV photodetection segment. Moreover, compatibility with GaN technology and a simple fabrication route make our devices suitable for commercial production.
Mondal et al. (Sat,) studied this question.