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Single-crystal silicon carbide (SiC) is a wide bandgap semiconductor with physical and electrical properties that provide superior performance compared to silicon or almost any other semiconductor material in high-voltage and high-power applications. It is also extremely hard, second only to diamond, and chemically almost inert which makes the CMP process step quite challenging. In recent years, a great deal of effort has been expended on advancing this process, particularly with regard to slurry formulations that can provide reasonable removal rates and damage-free final surface finishes. In this presentation, we will review a number of these developments for SiC CMP slurries. We will present data highlighting their process responses to standard CMP parameters, interactions with pad conditioning, and describe some of the requirements for production process controls.
Rhoades et al. (Fri,) studied this question.