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The integration of a silicon-based light emitter into existing CMOS technology has long been intriguing due to its optoelectronic compatibility with microelectronics 1. However, the indirect band gap nature of bulk silicon has hindered its effectiveness as a light emitter. In addressing this limitation, rare earth ions have emerged as significantly interesting candidates owing to their unique optical and electronic properties. Rare earth-doped silicon structures have earned special attention as they exhibit sharp light emission in different spectral regions 2 . This notable feature is attributed to the effective excitation of rare earth ions within the host matrix. Efficiently excited rare earth ions can produce visible emissions ranging from infrared to ultraviolet, presenting possibilities in diverse applications such as solid-state lighting, displays, lasers, photovoltaics, and optical communication. The incorporation of rare earth-doped silicon structures presents a promising solution to overcome the challenges posed by silicon's intrinsic properties, thereby paving the way for improved performance across a diverse range of optoelectronic applications. Europium is a attractive rare earth material with two optically active states, Eu 2+ and Eu 3+ , enabling it to generate a diverse range of color emissions extending from blue to red depending on the surrounding matrix 3. In this study, we investigated the optical properties and compositions of europium (Eu)-doped thin films including silicon oxide, silicon oxynitride, and silicon carbonitride. For this purpose, thin films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) with in-situ magnetron sputtering on p-type 3" Si (100) substrates. In-situ Eu doping was performed by a radio frequency (RF) magnetron sputtering gun, using a 0.25 in. thick, 2 in. (diameter) 99.9% pure Eu sputtering target. Precursor gases, including silane (diluted in 90% argon), oxygen (diluted in 90% argon), nitrogen (diluted in 90% argon), and ethane were utilized. Annealing was performed on the as-deposited films over a broad temperature range, from 600° to 1100°C, in a nitrogen (N 2 ) environment. Rutherford backscattering spectrometry (RBS) was performed to determine the atomic concentration of the film constituents. Variable angle spectroscopic ellipsometry (VASE) analysis was conducted to investigate the optical properties of the films. Room temperature photoluminescence (PL) experiments were performed using a laser diode excitation source operating at a wavelength of 375nm. Notably, bright visible emission was observed in some of the thin films. Finally, we discuss the influence of the atomic concentration of Eu and the annealing temperature on the emission properties observed in the photoluminescence experiments. 1 F. Azmi, Y. Gao, Z. Khatami, and P. Mascher, “ Tunable emission from Eu:SiO x N y thin films prepared by integrated magnetron sputtering and plasma enhanced chemical vapor deposition ,” J. Vac. Sci. Technol. A , vol. 40, no. 4, p. 043402, 2022, doi: 10.1116/6.0001761. 2 A. Brik et al. , “Annealing Effects on Structural Characteristics of Europium Doped Silicon-Rich Silicon Nitride,” Silicon , vol. 14, no. 14, pp. 8417–8425, 2022, doi: 10.1007/s12633-021-01636-w. 3 D. Li, X. Zhang, L. Jin, and D. Yang, “Structure and luminescence evolution of annealed Europium-doped silicon oxides films,” Opt. Express , vol. 18, no. 26, p. 27191, 2010, doi: 10.1364/oe.18.027191.
Azmi et al. (Fri,) studied this question.