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This study examines the superconducting properties of titanium nitride (TiN) deposited via plasma-enhanced atomic layer deposition on both planar and three-dimensional (3D) structures. Our deposition method achieves consistent uniformity, maintaining sheet resistance (R□) 95% across a 6-in. wafer, crucial for large-scale superconducting device fabrication and yield optimization. The planar films, akin to reactive-sputtered TiN, reached a critical temperature (Tc) of 4.35 K at a thickness of ≈40 nm. For aspect ratios (ARs) between 2 and 40, we observed a single transition of ≈2 K at ARs between 2 and 10.5, and multiple transitions at ARs 10.5. We discuss mechanisms influencing superconducting properties in the 3D structures, aligning with current and future superconducting technologies.
Femi‐Oyetoro et al. (Mon,) studied this question.