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Abstract Magnesium Oxide (MgO) thin film structures were deposited on glass and n-Si substrates by means of RF magnetron sputtering technique. Structural, morphological, optical characteristics of MgO thin film were determined by XRD, AFM and UV–Vis spectrometer techniques. The optical properties like absorption coefficient and optical band gap were extracted using optical transmittance and absorption spectra. The band-gap of MgO thin film was determined for direct electronic transition. Additionally, electric parameters like ideality factor, saturation current and barrier height of the Au/MgO/n-Si device were computed from the forward I–V data in dark state. The ideality factor was found to be greater than one. This indicates that the I–V characteristics of the device exhibits non-ideal attitude. The results show that the MgO thin film can be applied to both optical and electronic device applications.
Toprak et al. (Mon,) studied this question.