Numerical simulation of single abrasive grain grinding of silicon carbide surface

Abstract Silicon carbide (SiC) ceramics are extensively employed in aerospace and mechanical manufacturing owing to their outstanding material properties. However, their inherent high hardness and brittleness pose challenges in product processing. Utilizing the classical Johnson-Holmquist (JH-2) constitutive model in finite element simulation technology can facilitate the analysis of the impact of various grinding parameters on material surface damage. This approach yields valuable insights for selecting optimal processing parameters. The simulation of SiC surface grinding with single diamond abrasive grains demonstrates that grinding force increases with grain penetration depth. The resulting stress elevation promotes the accumulation of surface cracks, exacerbating material surface damage and abrasive wear. Furthermore, the damage to SiC surfaces is affected by grinding speed. A higher speed can lower grinding force, reduce abrasive wear, and enhance SiC surface smoothness. Nonetheless, increasing grinding speed also elevates residual stress in the workpiece due to higher kinetic energy. Hence, controlling the grinding wheel speed within a specific range and minimizing wheel surface penetration depth can effectively enhance SiC surface processing quality and prolong tool lifespan.