Synthesis and characterization of Mo and W compounds for disulfide materials

Abstract MoS 2 and WS 2 are spotlighted as fungible materials of graphene that can be used in electronic devices owing to being semiconductors with indirect and direct band gaps. Precursors (Mo(N t Bu) 2 (S t Bu) 2 ( 1 ), W(N t Bu) 2 (S t Bu) 2 ( 2 )) suitable for the deposition of these materials were synthesized and characterized. The molecular structures of 1 and 2 exhibit a tetrahedral geometry according to single‐crystal x‐ray crystallography. Thermogravimetric analyses of 1 and 2 showed two‐step weight loss. The residues from each step of 1 were MoS 3 and MoS 2 , and these results were consistent with the subsequent deposition results of 1 . We successfully established a PEALD‐MoS 2 process using 1 and H 2 S plasma as the precursor and reactant, respectively, at relatively low temperatures of 150–300 °C without any post‐sulfurization process. A temperature‐dependent selective deposition of MoS x phases was observed with the growth of amorphous MoS 3 films (150–200 °C), and crystalline MoS 2 films (250–350 °C).