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Abstract Among the emerging photovoltaic technologies, solid‐state dye‐sensitised solar cells (ssDSSCs) have attracted considerable interest due to their cost‐effective production, adjustable characteristics, and potential for lightweight and flexible applications. Nevertheless, achieving efficiencies comparable to established technologies, such as perovskite and silicon‐based solar devices, have proven challenging. Herein, the device structure, Pt/PEDOT: PSS/N719 dye/PC 61 BM/ITO is investigated theoretically using the solar cell capacitance simulator (SCAPS‐1D). Groundbreaking advancement is introduced in ssDSSC design, achieving remarkable theoretical power conversion efficiency of 20.73%, surpassing the performance reported in traditional dye‐based solar cell technologies. The model ssDSSC demonstrates an exceptional Fill factor of 86.64%, indicating efficient current collection; along with a modest short‐circuit current density ( J sc ) of 22.38 mA/cm 2 and an impressive open‐circuit voltage ( V oc ) of 1.0691 V, highlighting efficient light absorption and charge separation. Mott–Schottky capacitance analysis and parasitic resistances (series and shunt) have been thoroughly discussed. Despite the fact that only numerical simulation is involved, the proposed ssDSSCs structure gives insights into the fabrication of a highly efficient solar cell that can be injected into the production workflow in order to advance the photovoltaic technology of the solid‐state DSSC.
Njema et al. (Thu,) studied this question.