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Abstract Ga 2 O 3 photodetectors with demonstrated high sensitivity provide a potential subversive scheme for solar‐blind photodetection. However, the planar structure and the relatively slow response speed of the device have restricted the integration and application of Ga 2 O 3 photodetectors. Herein, a narrow SiO 2 barrier layer is introduced on the commercial SiC substrate, and a vertical photodetector is realized based on β ‐Ga 2 O 3 /SiO 2 /SiC heterostructure with controllable tunneling effect by tailoring the band structure at the interface. The developed device exhibits unconventional rectification characteristics and photoresponse performance in different biasing modes owing to the controllable tunneling effect at the interface. In particular, the photodetector achieves a high responsivity (186.8 A W −1 ) under solar‐blind illumination at reverse bias, while exhibiting obvious advantages in dark current (3 pA), photo‐to‐dark current ratio (8.8 × 10 6 ), linear dynamic range (138.8 dB), and specific detectivity (1.4 × 10 15 Jones) at forward bias. The photodetector also demonstrates excellent photoresponse stability after 6 months in air without encapsulation. In addition, an alternating biasing strategy, inspired by its bidirectional operability, is proposed to suppress the persistent photoconductivity effect and increase the decay speed by 1.23 × 10 5 times. This work provides a referable strategy for the further development of high‐performance Ga 2 O 3 ‐based photoelectronics.
Wang et al. (Wed,) studied this question.