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Interfaces are ubiquitous in modern electronics and assessing their properties is crucial when it comes to device reliability. Here, we present nonequilibrium molecular dynamics calculations of heat transport across GaAs/Ge heterojunctions. We compute the thermal boundary resistance, considering different interface morphologies, ranging from atomically flat to gradual or rough interfaces. We also discuss the implications for thermal rectification and predict a rectification coefficient as large as 30%.
Albrigi et al. (Mon,) studied this question.
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