An Asymmetric SiC Power Module Directly Integrated with Vapor Chamber for Thermal Balancing in MMC

Power modules in silicon carbide (SiC)-based modular multilevel converters (MMCs) suffer from notably severe thermal imbalance and localized overheating. This paper puts forward an asymmetric SiC power module with direct integration of a vapor chamber (VC), designed to balance the thermal distribution inside MMC SMs. Specifically, the chips on the lower side of the HBSM are soldered onto a VC, which is additionally mounted on the direct bonding copper (DBC). Endowed with merits such as favorable temperature uniformity, exceptional thermal conductivity, compact size, flexible design, high integration level, and reasonable cost, the VC serves as an outstanding heat diffuser significantly expanding the effective thermal conduction area and reducing thermal resistance. Moreover, in this structure, the VC also functions as a conductor for device current. Finite element method (FEM) simulation results reveal that the proposed structure can notably reduce the hotspot temperature (from 109 °C to 71.8 °C), the maximum temperature difference among chips (from 45 °C to 13.89 °C), and the low-frequency temperature swing (TSL) (from 68 °C to 38 °C). Consequently, the issues of localized overheating and thermal imbalance in SiC-MMC SMs are effectively addressed. Lifetime analysis further indicates that the proposed structure can reduce the annual damage rate of the chip solder layer by 92.6%.