What question did this study set out to answer?

This research aims to explore the impact of Y doping on oxygen vacancies and ferroelectric performance in HfO2.

January 17, 2026Open Access

N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO_ 2

OROliver RehmUniversity of Konstanz LBLutz Baumgarten FWFlorian WunderwaldLeibniz Institute for Solid State and Materials Research

Key Points

This research aims to explore the impact of Y doping on oxygen vacancies and ferroelectric performance in HfO2.
Conducted hard x-ray photoelectron spectroscopy (HAXPES) on Y-doped HfO2.
Analyzed the mathematical equation signatures in x-ray photoemission spectra.
Compared findings with pure HfO2 and isoelectronic substitution scenarios.
Revealed the inapplicability of Hf mathematical equation signatures for quantitative OV determination in heterovalent doping.
Confirmed that the method works only for pure HfO2 or isoelectronic substitution cases.
Indicated that doping affects the stabilization of ferroelectric phase.

Abstract

The current market launch of HfO_ 2 -based ferroelectric devices relies on the control of the inherent oxygen vacancies (OVs) and their impact on the ferroelectric performance. Due to the necessary stabilization of the ferroelectric phase by doping, several dopants are investigated for their applicability to control the vacancy concentration. Hf mathematical equation signatures in X-ray photoemission spectra are often used as an indication of OVs for both qualitative and quantitative analysis. The analysis of Y doped HfO_ 2 (Y: HfO_ 2) as investigated by hard x-ray photoelectron spectroscopy (HAXPES) reveals the inapplicability of the Hf mathematical equation signature for a quantitative determination of OVs in the case of heterovalent doping and is restricted to pure HfO_ 2 or isoelectronic substitution of Hf by, for example, Zr.

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