Boosting photoelectrochemical performance of ZnIn2S4 photoanodes via antimony-induced defect and surface homojunction engineering

Key Points

• This research aims to improve the photoelectrochemical performance of ZnIn2S4 photoanodes through defect and surface engineering techniques using antimony.
• Synthesis of ZnIn2S4 photoanodes incorporating antimony defects.
• Characterization of material properties using spectroscopic techniques.
• Evaluation of photoelectrochemical performance under light illumination.
• Improved charge mobility observed in the modified photoanodes.
• Reduced defect density resulting in enhanced photocurrent response.
• Demonstrated higher efficiency in photoelectrochemical water splitting applications.