We propose a strain-optimized design strategy for lattice-matched InAs1−xSbx/Al1−yInySb Type-I quantum wells (QWs) that emit across the near-to mid-infrared spectrum (2–5 µm). By combining elastic strain energy minimization with band offset calculations, we identify Type-I alignment for Sb contents (x ≤ 0.40) and In contents (0.10 < y ≤ 1). At the same time, Type-II dominates at higher Sb compositions (x ≥ 0.50). Using the transfer matrix method under the effective mass approximation, we demonstrate precise emission tuning via QW thickness (LW) and compositional control, achieving a wavelength coverage of 2–5 µm with <5% strain-induced energy deviation. Our results provide a roadmap for high-efficiency infrared optoelectronic devices, addressing applications in sensing and communications technologies.
Villa-Martínez et al. (Thu,) studied this question.