Mg2Si was prepared via self-propagating high-temperature synthesis. Characterization by XRD and SEM confirmed Mg2Si as a basis. The synthesized product density, porosity, electrical resistivity, and Seebeck coefficient were measured. Electrical resistivity showed a nonlinear, semiconductor-like dependence. Similarly, the Seebeck coefficient followed a nonlinear trend, reaching a minimum of –367 µV/K at 589 K.
Sytschev et al. (Sun,) studied this question.