Infrared Photodetection This image illustrates a self-powered infrared photodetector based on TeOx with engineered energy-band gradients for efficient carrier separation without external bias. The device achieves high sensitivity, fast response, and excellent stability under low-power operation, demonstrating the potential of disordered oxide semiconductors for next-generation, energy-efficient infrared sensing technologies. More information can be found in the Research Article by Mingsheng Xu, Huihui Zhu, Yong-Young Noh, Ao Liu, and co-workers (10.1002/adfm.202520501).
Wang et al. (Thu,) studied this question.