We report 1 kV vertical Al0.51Ga0.49N-on-sapphire power Schottky barrier diodes (SBDs) with oxygen plasma treatment (OPT-SBDs). Compared with the reference AlGaN SBDs without treatment (C-SBDs), the fabricated vertical AlGaN OPT-SBDs feature a dramatically reduced reverse leakage current density by three orders of magnitude and a significantly boosted breakdown voltage of 1045 V. In addition, the fabricated AlGaN OPT-SBDs exhibit a high on/off ratio of ∼1010, a low turn-on voltage of 1.59 V, a low specific on-resistance of 0.18 Ω cm2, and an ideality factor of 2.36. These results demonstrate the great potential of AlGaN-based power devices for high-voltage and high-power applications.
Zhang et al. (Mon,) studied this question.