A comparative study of particle defects on cleaned GaSb wafers with respect to their morphology, elemental composition, and origin have been investigated. Extensive range of advanced characterization techniques including KLA candela, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy and energy dispersive x-ray spectroscopy have been used to give the results of particle distribution and chemical composition. The results indicate that the distribution and composition of residual particles exhibit significant complexity, rather than the particles themselves. The particle defects on the surface of GaSb are mainly the accumulation and adsorption of organic and inorganic substances used in the polishing and cleaning processes. In-depth analysis of particle properties and origins is conducted, and the incorporation of appropriate surfactants effectively reduced the particle count on the substrate surface. This work offers a solution for enhancing surface quality and facilitating the production of high-performance devices.
Bai et al. (Tue,) studied this question.