March 3, 2026

Photoluminescence properties of α-(Al x Ga1– x )2O3 thin films under excitation with synchrotron radiation

Key Points

Strong emission bands were identified at 239 nm and 258 nm in the ultraviolet range, signaling significant luminescence properties.
These findings promise advancements in DUV optoelectronic devices due to the ultra-wide bandgap characteristics, enhancing device performance.
Analysis involved systematic evaluations of α-(AlxGa1−x)2O3 thin films at low temperatures, utilizing synchrotron radiation for excitation.
Such observations highlight the potential of α-(AlxGa1−x)2O3 films as light-emitting materials, warranting further exploration.

Abstract

α-(AlxGa1−x)2O3 has great potential in deep ultraviolet (DUV) optoelectronic devices due to its ultra-wide bandgap. The α-(AlxGa1−x)2O3 films demonstrated good DUV photodetection but hardly exhibited luminescence in the DUV range. To date, no reports on the luminescence properties of α-(AlxGa1−x)2O3 have been published. In this work, the photoluminescence properties of α-(AlxGa1−x)2O3 thin films from DUV to the red region at a low temperature of 40 K were systematically studied using synchrotron radiation. Based on our observations, some intriguing features have been discussed. The strong emission of α-(AlxGa1−x)2O3 in the DUV region is dominated by two bands with peaks at 239 and 258 nm. This work indicates α-(AlxGa1−x)2O3 films are potential DUV light-emitting materials.

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Cite This Study

Chen et al. (Mon,) studied this question.

synapsesocial.com/papers/69a75b94c6e9836116a231a8 https://doi.org/https://doi.org/10.1063/5.0304663

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