What question did this study set out to answer?

This research aims to characterize the composition, structure, and electrical properties of Ga2O3 thin films.

March 5, 2026Journal of Materials Chemistry C1 citationsOpen Access

Structure and electrical properties of Ga 2 O 3 thin films grown by atomic layer deposition on Ru and TiN electrodes

LALauri AarikUniversity of Tartu ATAivar TarreUniversity of Tartu HMHugo MändarUniversity of Tartu

Key Points

This research aims to characterize the composition, structure, and electrical properties of Ga2O3 thin films.
Utilized atomic layer deposition for thin film growth
Employed GaI3 and O3 as precursors
Conducted structural and electrical property evaluations
The thin films exhibited specific structural characteristics determined during analysis
Electrical properties were systematically characterized, highlighting performance capabilities

Abstract

The composition, structure, and electrical properties of Ga 2 O 3 thin films, grown by atomic layer deposition (ALD) from GaI 3 and O 3 precursors, were characterized.

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