We report a versatile, CMOS-compatible fabrication module for sub-100 nm TiN and TaN pillar electrodes, a key building block for sandwich-type test structures. As a demonstration, the electrodes were integrated into carbon nanotube-based nonvolatile random-access memory (CRAM) test structures. High-resolution hydrogen silsesquioxane (HSQ) masks defined by electron beam lithography were transferred into TiN films using optimized Ar/Cl2 inductively coupled plasma reactive ion etching. Optical emission spectroscopy was used for real-time endpoint detection, ensuring precise etch control. The process achieved a TiN-to-HSQ selectivity of ~1.6 and reproducible nanoscale features with smooth sidewalls and an average taper angle of ~77°. Buffered hydrogen fluoride treatment effectively removed residual HSQ, revealing sharp TiN features and preserving pillar geometry. Atomic force microscopy (AFM) confirmed pillar height and profile fidelity, while conductive AFM verified electrical conductivity after planarization. The module was further demonstrated through the fabrication of TiN pillar arrays, TaN pillars, and sub-100 nm TiN line arrays. A CRAM test structure incorporating TiN pillars exhibited preliminary switching, indicating that both the test structure and fabrication process are feasible. This fabrication module provides a reproducible platform for nanoscale TiN and TaN electrodes, supporting laboratory-scale research and providing a pathway toward future integration of emerging memory and nanoelectronic technologies.
Chen et al. (Sat,) studied this question.