High-Temperature Solid-State Synthesis of Nb2SiTe4 Nanosheets and Their Photoelectric Performance in Broadband Self-Powered Photodetectors | Synapse
March 18, 2026
High-Temperature Solid-State Synthesis of Nb2SiTe4 Nanosheets and Their Photoelectric Performance in Broadband Self-Powered Photodetectors
Key Points
The aim is to synthesize Nb2SiTe4 nanosheets and evaluate their photoelectric performance in photodetectors.
High-temperature solid-state synthesis of Nb2SiTe4 nanosheets
Characterization of structural and optical properties
Assessment of photoelectric performance in photodetector applications
Nb2SiTe4 nanosheets exhibited high carrier mobility.
Excellent optical absorption properties were observed.
Demonstrated potential for use in self-powered photodetectors.
Abstract
Nb₂SiTe₄, a layered narrow-bandgap van der Waals semiconductor, has been attracting more and more attention due to its high carrier mobility and excellent optical absorption properties. In this study, we...