What question did this study set out to answer?

The aim is to investigate the low frequency noise characteristics of GaAsBi quantum well structures.

March 28, 2026

Low Frequency Noise Spectroscopy of GaAsBi QW Structures for NIR Light Sources

Key Points

The aim is to investigate the low frequency noise characteristics of GaAsBi quantum well structures.
Analyzed noise characteristics within a frequency range of 10 Hz – 100 kHz
Conducted measurements across a temperature span of 159 K - 320 K
Assessed noise components including 1/f, 1/f α, and Lorentzian types
Noise spectroscopy indicated the presence of defects in GaAsBi QWs
Defects were linked to a redistribution of current out of the active region of the diodes
Lower growth temperature potentially contributed to defect formation

Abstract

Low frequency (10 Hz – 100 kHz) noise characteristics of GaAsBi quantum wells (QWs) based light-emitting diodes were investigated over the temperature range 159 K - 320 K. 1/f, 1/f α , and Lorentzian type components make up the low frequency noise spectra of the investigated structures. Noise spectroscopy revealed that the investigated GaAsBi QW structures, possibly due to lower growth temperature, contain defects that redistribute current out of the diode's active region.

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Cite This Study

Pliateryte et al. (Thu,) studied this question.

synapsesocial.com/papers/69c772818bbfbc51511e30d6 https://doi.org/https://doi.org/10.1142/s0219477526400043

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