Enhancement of resistive switching properties in RRAM with AlN-Al2O3 bilayer structure

This study presents the fabrication process and bipolar resistive switching behavior of an Au/Al/AlN/Al2O3/Pt/Ti random-access memory device. The proposed device, incorporating a thin Al2O3 layer between the AlN resistive switching layer and the Pt bottom electrode, exhibits enhanced resistive switching performance. Specifically, the device demonstrates improved endurance, with the number of switching cycles increasing from 122 to 2791, and a higher switching resistance ratio, with the maximum on/off ratio rising from 105 to 108. The enhanced switching stability originates from the inserted Al2O3 layer enabling precise control over conductive filament rupture locations. This spatial regulation yields more stable resistive switching behavior, which is a critical requirement for nonvolatile memory applications.