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A numeric model is proposed describing the chemical and physical mechanisms governing image formation in metaloxide (MOx) EUV photoresist systems. Experimental measurements of physical and chemical properties are used to develop a quantitative representation of the chemical and physical state of the MOx resist film at each step in the lithographic process. The role of radiation-induced condensation to drive non-linear changes in development rate is elucidated. Lithographic performance parameters are predicted and compared with experimental results.
Hinsberg et al. (Mon,) studied this question.
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