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The reliable resistive switching properties of Au/ZrO 2 / Ag structure fabricated with full room temperature process are demonstrated in this letter. The tested devices show low operation voltages (4 ), fast switching speed (50 ns), and reliable data retention (ten years extrapolation at both RT and 85 °C). Moreover, the benefits of high yield and multilevel storage possibility make them promising in the next generation nonvolatile memory applications.
Li et al. (Fri,) studied this question.