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Free carrier absorption in heavily doped layers reduces the useful photon flux in the photoconductive region of extrinsic Si infrared detectors. A simple theory is developed which predicts the transmissivity of such layers as a function of their sheet resistance and the wavelength of the radiation. Experimental data over the 2.5-20 /spl mu/m wavelength and 5-500 Omega/square sheet resistance range are given for both diffused and ion-implanted layers and also for polysilicon gates. The temperature dependence of both transmissivity and sheet resistance is investigated from 20 to 300 K.
Schroder et al. (Wed,) studied this question.