Key points are not available for this paper at this time.
Abstract Good detection efficiency and high energy‐resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X‐ray and gamma‐ray detection applications such as medical and industrial imaging, industrial gauging and non‐destructive testing, security and monitoring, nuclear safeguards and non‐proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd 1− x Zn x Te‐based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd 1− x Zn x Te detector performance. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Building similarity graph...
Analyzing shared references across papers
Loading...
Csaba Szeles
Eötvös Loránd University
physica status solidi (b)
II-VI (United States)
Building similarity graph...
Analyzing shared references across papers
Loading...
Csaba Szeles (Wed,) studied this question.
synapsesocial.com/papers/69ddc0b1e02db3e29db0bd47 — DOI: https://doi.org/10.1002/pssb.200304296