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Lead-free perovskite infrared light-emitting diodes are achieved by using a halide perovskite CsSnI3 as an emissive layer. The film shows compact micrometer-sized grains with only a few pinholes and cracks at the grain boundaries. The device exhibits maximum radiance of 40 W sr-1 m-2 at a current density of 364.3 mA cm-2 and maximum external quantum efficiency of 3.8% at 4.5 V.
Hong et al. (Mon,) studied this question.
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