Boron phosphide (BP) is a promising III-V compound semiconductor known for its exceptional thermal stability, high hardness, and semiconducting properties, making it suitable for high-performance electronic and optoelectronic applications. In this thesis, BP was synthesized using the solid-state reaction method, a simple and cost-effective approach that enables the formation of high-purity materials through direct elemental reaction. The synthesis process involved a series of steps, including precise weighing, grinding, heating in a tubular furnace, washing, drying, and sample collection. Comprehensive characterization techniques were employed to analyze the structural, chemical, and morphological features of the synthesized BP. X-ray Diffraction (XRD) analysis confirmed the crystalline nature and phase formation of BP. Raman spectroscopy provided insights into the vibrational modes and purity of the material. FTIR spectroscopy identified the presence of characteristic B–P bonds and validated the chemical structure. Scanning Electron Microscopy (SEM) revealed the surface morphology and particle distribution, indicating a uniform microstructure. The results confirm the successful synthesis of boron phosphide with desirable physical and chemical characteristics. This study highlights the potential of solid-state synthesis as an effective route for producing BP and provides a foundation for further research in material development for electronic and photonic applications.
Rajitha et al. (Sun,) studied this question.