Two-dimensional (2D) transition metal dichalcogenides hold exceptional promise for next-generation light-emitting applications owing to their distinctive electronic configuration and exceptional optoelectronic characteristics. Their vertically stackable architecture not only reduces contact resistance but also enables higher current densities and enhanced extrinsic quantum efficiency (EQE). Nevertheless, the performance of current 2D electroluminescent (EL) devices remains constrained by low operating voltages and weak electric fields, limiting their broader adoption in light-emitting diode technologies. In this work, we demonstrate a high-electric-field-driven (109 V/m) vertical tunneling EL mechanism in 2D heterostructures. By applying such intense fields, we achieve field emission of electrons from Bi2Sr2CaCu2O8 and holes from gold electrodes, resulting in diploid enhancement in EQE compared to conventional approaches in the low electric-field regime. Our findings in EL emission technology offer alternative perspectives for cavity-integrated exciton modulation and on-chip integrated optoelectronic devices.
Chen et al. (Mon,) studied this question.