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Abstract Organic–inorganic hybrid perovskite solar cells have resulted in tremendous interest in developing next generation photovoltaics due to high record efficiency exceeding 22%. For inverted structure perovskite solar cells, the hole extraction layers play a significant role in achieving efficient and stable perovskite solar cell by modifying charge extraction, interfacial recombination losses, and band alignment. Here, cesium doped NiO x is selected as a hole extraction layer to study the impact of Cs dopant on the optoelectronic properties of NiO x and the photovoltaic performance. Cs doped NiO x films are prepared by a simple solution‐based method. Both doped and undoped NiO x films are smooth and highly transparent, while the Cs doped NiO x exhibits better electron conductivity and higher work function. Therefore, Cs doping results in a significant improvement in the performance of NiO x ‐based inverted planar perovskite solar cells. The best efficiency of Cs doped NiO x devices is 19.35%, and those devices show high stability as well. The improved efficiency in devices with Cs:NiO x is attributed to a significant improvement in the hole extraction and better band alignment compared to undoped NiO x . This work reveals that Cs doped NiO x is very promising hole extraction material for high and stable inverted perovskite solar cells.
Chen et al. (Mon,) studied this question.