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This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of the vertical β-Ga 2 O 3 Schottky barrier diode (SBD). With this ET, vertical β-Ga 2 O 3 SBD demonstrates a reverse blocking voltage of 1.55 kV and low specific on-resistance (RON,sp) of 5.1 mQ · cm 2 at a lightly doped β-Ga 2 O 3 layer with epitaxial thickness of 10 μm, yielding a high power figure-of-merit (P-FOM) of 0.47 GW/cm 2 . Combined with high forward current on/off ratio of 108 ~ 109, Schottky barrier height of 1.01 eV, and ideality factor of 1.05, vertical β-Ga 2 O 3 Schottky Diode with implanted ET verifies its great potential for future power rectifiers.
Zhou et al. (Fri,) studied this question.