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We report a promising IQ optical modulator for beyond 100-GBd transmitter. By introducing both a new n-i-p-n heterostructure and an optimized capacitance-loaded traveling-wave electrode (CL-TWE), high-frequency electrical losses of the modulator can be drastically reduced. As a result, we extended an electro-optic (EO) bandwidth without degrading other properties, such as half-wave voltage (Vπ) and optical losses. The 3-dB EO bandwidth of the 1.5-V Vπ modulator reaches 80 GHz. Furthermore, we demonstrated up to 128-GBd IQ modulations by co-assembling with an ultra-broadband InP-based driver IC.
Ogiso et al. (Tue,) studied this question.