Direct Identification of the Conducting Channels in a Functioning Memristive Device

Titanium dioxide memristive devices have been non-destructively characterized using x-ray absorption spectromicroscopy and TEM. These techniques allow direct identification of the chemistry and structure of the conducting channel responsible for the bipolar resistance switching seen in these devices. Within the TiO2 matrix, we observe the formation of a Ti4O7 Magnéli phase possessing metallic properties and ordered planes of oxygen vacancies. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.