Ferrite-Partially-Filled on-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOS

This paper reports new fully-CMOS-compatible on-chip RF inductors with Ni-Zn-Cu and Co 2 Z-type ferrite-partially-filled structures fabricated using a novel low-temperature nano-powder- mixed-photoresist filling technique. Measured improvements are up to +35% in L and +250% in Q across multi-GHz with f 0 to 11.4 GHz.