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Organolead halide perovskites are used for low-operating-voltage multilevel resistive switching. Ag/CH3NH3PbI3/Pt cells exhibit electroforming-free resistive switching at an electric field of 3.25 × 103 V cm–1 for four distinguishable ON-state resistance levels. The migration of iodine interstitials and vacancies with low activation energies is responsible for the low-electric-field resistive switching via filament formation and annihilation. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
Choi et al. (Wed,) studied this question.