CuGaO2: A Promising Inorganic Hole‐Transporting Material for Highly Efficient and Stable Perovskite Solar Cells

The p-type inorganic semiconductor CuGaO2 as a hole-transporting layer (HTL) in perovskite solar cells (PSCs) provides higher carrier mobility, better-energy level matching, and superior stability, as well as low-temperature processing technique. Compared to organic HTL, a very competitive PCE of 18.51% with long-term stability is achieved. This indicates that CuGaO2 is a promising HTL for efficient and stable PSCs. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.