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A new doping technique for phosphorous using a Zn 3 P 2 source has been developed. From an extensive study of the electrical properties of ZnSe doped with P, it has been found that the doped P induces point defects in excess of the doped P atoms which lowers the electron concentration and the electron mobility much more than expected. From an investigation of the low-temperature PL spectra, it was found that P forms a shallow acceptor with an activation energy of 80-92 meV in MBE-grown lightly P-doped ZnSe, and at the same time a deep acceptor with an activation energy of 0.6-0.7 eV in heavily P-doped ZnSe.
Yao et al. (Sun,) studied this question.