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Memristor-based random access memory (RAM) is being explored as a potential replacement for flash memory to sustain the historic trends in the improvement of density, access time, and energy consumption of nonvolatile memory. In this paper, we present the detailed functionality of multibit one-transistor one-memristor (1T1R) cell-based memory arrays, and propose circuit-level performance and energy models for an individual memory cell and the memory array as a whole. We consider titanium dioxide (TiO 2 )and hafnium oxide (HfO x )based memristors, and for these technologies, there is a sub-10% difference between energy and performance computed using our models and HSPICE simulations. Using a performance-driven design approach, the energy-optimized TiO 2 -based resistive RAM (RRAM) array consumes the least write (4.06 pJ/b) and read energy (188 fJ/b) when storing 3 b/cell for 100-ns write and 1-ns read access times. Similarly, HfO x -based RRAM array consumes the least write (365 fJ/b) and read energy (173 fJ/b) when storing 3 b/cell for 1-ns write and 200-ns read access times. We also present a detailed analysis of the implications of process, voltage, and temperature variations on the performance and energy consumption of a multibit RRAM cell.
Zangeneh et al. (Wed,) studied this question.