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We have determined the coercive voltage Ec as a function of thickness d for PZT ferroelectric memories. For thick films (≫ 1μm), Ec ∼ d−1/3, in accord with the theory of Kay and Dunn Phil Mag. 7, 2027 (1962) ; for submicron films, Ec ∼ d−4/3, in accord with Neel's theory for coercive magnetic field Hc in thin magnetic films J. Phys Radium 17, 250 (1956). The switching times and shape i (t) of the displacement current transient were measured vs. temperature and field. They satisfy the theory of Ishibashi and Takagi J. Phys. Soc. Jpn. 31, 506 (1971) and show that domain nucleation is approximately two dimensional. The times τ are very fast (≪100ns at 1. 0V drive) and depend upon field E and reduced temperature t = (Tc - T) /TC according to a scaled relationship Orihara and Ishibashi Jpn. J. Appl. Phys. 24, 902 (1985) where x is given by t/E and α is an activation field equivalent to 120 kV/cm at 300K.
Scott et al. (Mon,) studied this question.
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