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By use of x-ray lithography Si inversion layers have been fabricated with width 25 nm and mobility 15 000 cm^2/V s. These display oscillations in their conductance that are periodic in the number of electrons per unit length, even in zero magnetic field. The oscillations reflect an oscillatory activation energy of the conductance and are accompanied by unusual nonlinearities suggestive of pinned charge-density waves.
Scott-Thomas et al. (Mon,) studied this question.