February 25, 2005

Polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films

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Abstract

The polarization switching kinetics of epitaxial Pb(Zr0.4Ti0.6)O3 thin films were investigated by measuring write pulse-width dependences of switched polarization ΔP(t) under various applied electric fields. It was found that ΔP(t) follows the predictions of the Kolmogorov–Avrami–Ishibashi model quite well. However, the detailed behaviors of ΔP(t) were different for low and high electric field regions, which separated out around 220kV∕cm. The coercive field also showed different frequency dependences depending on the region. These differences were attributed to changes in the polarization switching kinetics. A possible origin of the switching kinetics changes is also discussed.

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So et al. (Fri,) studied this question.

synapsesocial.com/papers/6a1d773b266863fda62f52dd https://doi.org/https://doi.org/10.1063/1.1870126

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