Key points are not available for this paper at this time.
A comparison has been made between the infrared local mode absorption spectra of boatgrown and pulled crystals of GaAs:Si. The samples were compensated either by electron or neutron irradiation or by copper diffusion. Boron is present in the pulled material and previously unreported lines have been assigned as follows: 11B(Ga) (517.0 cm-1), 10B(Ga) (540.2 cm-1), B(Ga)-Si(As) pairs (349.0, 570.9, 596.0, 661.0 and 684.8 cm-1). Two further lines at 762.7 and 796.0 cm-1 may be due to interstitial boron atoms produced by the irradiations. It is thought that other lines may be due to the centre B(Ga)-Si(As)-Si(Ga).
Thompson et al. (Mon,) studied this question.