Key points are not available for this paper at this time.
Recombination-enhanced annealing of defects in semiconductors has been observed directly for the first time. The defects were produced in GaAs by 1-MeV electron irradiation and observed by transient-junction-capacitance techniques. The data clearly relate the enhanced defect annealing rate to electron-hole recombination processes at the defect.
Lang et al. (Mon,) studied this question.