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A non-volatile resistive switching mechanism based on trap-related space-charge-limited-conduction (SCLC) is proposed. Excellent memory characteristics have been demonstrated using near-stoichiometric cuprous oxide (Cu x O) metal-insulator-metal (MIM) structures: low-power operation, fast switching speed, superior temperature characteristics, and long retention. This MIM memory cell is fully compatible with standard CMOS process. The proposed switching mechanism is a strong contender for high density and low cost memory applications
Chen et al. (Thu,) studied this question.
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