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Flexible electronics have attracted much attention since they enable promising applications such as low-cost RFID tags and e-paper. Thin-film transistors (TFTs) are considered as an ideal candidate to implement flexible electronics on low-cost substrates. Most TFT technologies, however, have only mono-type - either n- or p-type - devices and thus modern design technologies for silicon-based electronics cannot be directly applied. In this paper, we propose a novel design style Pseudo-CMOS for flexible electronics that uses only mono-type TFTs while achieving comparable performance with the complementary-type designs. The manufacturing cost and complexity can therefore be significantly reduced while the circuit yield and reliability are also enhanced with the built-in capability of post-fabrication tuning. Some standard cells have been designed and fabricated in p-type organic and n-type InGaZnO (IGZO) TFT technologies which successfully verify the superiority of the proposed Pseudo-CMOS design style. To the best of our knowledge, this is the first design solution that has proven superior performance for both types of TFT technologies.
Huang et al. (Mon,) studied this question.