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A novel charge-storage structure is described. The floating-gate avalanche-injection MOS (FAMOS) structure is shown to exhibit memory behavior in the form of long-term charge storage on the floating conductive gate of an insulated gate field-effect device. Charge is stored in the floating polysilicon gate by avalanche injection of electrons from an underlying p-n junction.
D. Frohman‐Bentchkowsky (Thu,) studied this question.