Key points are not available for this paper at this time.
Luminescence and excitation spectra were studied on molecular-beam-epitaxially grown GaAs-Al₀. ₄₄Ga₀. ₅₆As quantum-well structures consisting of ten periods, each period having a 100-nm well separated from a 5-nm well by a 5-nm barrier. Luminescence below the photon energy of the heavy-hole exciton transition in the narrow well was observed and accounted for in position, shape, and strength in terms of tunneling-assisted photon emission between the narrow and wide wells.
Nelson et al. (Mon,) studied this question.