Halide-Perovskite-Based Memristor Devices and Their Application in Neuromorphic Computing

Memristors have great potential in next-generation smart electronics and neuromorphic computing. The halide perovskites (HP) receive increasing attention in this context, due to their mixed ionic1000-0ptelectronic conduction behavior, adjustable band gap, facile fabrication, low operating current, and ultralow leakage current. Advanced synaptic functions from HP memristors could be realized via more complex, three-terminal device architectures with low energy consumption. This review provides detailed insight into the operating mechanism, recent advancements, and remaining challenges of HP memristors, and suggests future prospects for the development of next-generation neuromorphic devices.